Group‐IV Semiconductor Materials for Nanoelectronics and Cryogenic Electronics

This Special Section of physica status solidi (a) covers presentations Symposium I held at the 2022 Fall-EMRS Meeting in Warsaw, Poland. Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are most important materials micro- nanoelectronics but they will also play a key role future quantum devices. symposium aimed to share latest research field group-IV nanoelectronic Silicon (Si) is one dominant semiconductor with versatile applications ranging from electronics over photovoltaics sensors actuators. Due intrinsically higher electron hole mobility germanium (Ge) or silicon-germanium (SiGe) rapidly gaining interest nanoelectronics. The same holds true for tin (Sn) its alloys other semiconductors (e.g., GeSn). In current device dimensions approaching single-digit-nanometer scale, nanowires often building blocks transistors. However, many processing methods concepts have be adopted since nanostructures generically subject nano-size effects. These effects involve instance confinement, dielectric detrimental surface states, statistical issues doping ultrasmall volumes, etc. bears risk deteriorate performance reliability even cause complete failure On hand, if fully understood, may open up new vistas increased performance, reduced power consumption routes towards computing. Generally, high surface-to-volume ratio properties dominated by surface. Therefore, an understanding physical chemical nanostructure interfaces metals dielectrics mandatory control optimize gate control, threshold voltage, ohmic contacts, carrier transport, Finally, simulations modelling crucial nanoelectronics, starting ab-initio model physical/quantum-chemical transport performance. There total four articles this Section: Knoch et al. investigate experiments influence oxide-channel on switching behavior cryogenic field-effect transistors as well possibility use different approach than conventional Si-nanostructures (article number 2300069). Ratschinski report about another alternative silicon method, similar modulation III–V that based Al-doped SiO2 shells around Si 2300068). authors reveal electrical resistance thereby several orders magnitude. article 2300066, Frentzen show electronic structure ultrathin wells can shifted embedding them dielectrics, i.e., (n-type) vs. Si3N4 (p-type) behavior. Hence, so-called NESSIAS-effect completely avoids impurity doping. Galderisi study temperature dependence reconfigurable (RFET) demonstrate how these devices extreme temperatures 80 475 K 2300019). We thank all participants our symposium, particular invited speakers, scientific committee members, papers, editors (a). addition, we appreciate support sponsor European Nanoelectronics Network ASCENT+. Daniel Hiller, Ray Duffy, Vihar Georgiev, Walter Weber Guest Editors